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| NID5001N Preferred Device Self-protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Features http://onsemi.com VDSS (Clamped) 42 V ID MAX (Limited) 33 A* RDS(ON) TYP 23 m @ 10 V Drain Overvoltage Protection MPWR * * * * * * * * Low RDS(on) Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Gate Input RG ESD Protection Temperature Limit Current Limit Current Sense Source MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate-to-Source Voltage Drain Current Continuous Symbol VDSS VDGR VGS ID PD 64 1.0 1.56 RqJC RqJA RqJA EAS 1.95 120 80 1215 C/W Value 42 42 "14 Unit Vdc Vdc Vdc NID5001N = Device Code Y = Year WW = Work Week DPAK CASE 369C STYLE 2 1 2 3 MARKING DIAGRAM YWW X NID 5001N Internally Limited W 1 = Gate 2 = Drain 3 = Source Total Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 1) @ TA = 25C (Note 2) Thermal Resistance - Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 4.5 Apk, L = 120 mH, RG = 25 W) Operating and Storage Temperature Range ORDERING INFORMATION Device NID5001NT4 Package DPAK Shipping 2500/Tape & Reel mJ For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. TJ, Tstg -55 to 150 C 1. Minimum FR4 PCB, steady state. 2. Mounted onto a 2 square FR4 board (1 square, 2 oz. Cu 0.06 thick single-sided, t = steady state). *Max current may be limited below this value depending on input conditions. (c) Semiconductor Components Industries, LLC, 2004 1 January, 2004 - Rev. 6 Publication Order Number: NID5001N/D NID5001N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25C) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150C) Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25C) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150C) Source-Drain Forward On Voltage (IS = 5 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn-on Time uo e Turn-off Time Turn-on Time uo e Turn-off Time Slew Rate On Slew-Rate Off VGS = 5.0 Vdc VDD = 25 Vdc ID = 1.0 Adc E t RG = 2 5 W Ext 2.5 VGS = 10 Vdc VDD = 25 Vdc ID = 1.0 Adc Ext RG = 2.5 W RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V T(on) T(off) T(on) T(off) -dVDS/dton dVDS/dtoff 3 32 68 11 86 0.5 0.35 40 0 75 15 5 95 V/ms V/ms ms ms VGS(th) 1.0 RDS(on) 23 43 RDS(on) 28 50 VSD 0.80 34 60 1.1 V 29 55 mW 1.8 5.0 2.0 Vdc -mV/C mW V(BR)DSS 42 42 IDSS 1.5 6.5 IGSSF 50 5.0 100 mAdc 46 44 50 50 Vdc mAdc Symbol Min Typ Max Unit SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) Current Limit (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150C) (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150C) Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc TLIM(off) TLIM(on) TLIM(off) TLIM(on) ILIM 21 12 29 13 150 135 150 135 30 19 41 24 175 160 165 150 36 30 49 31 200 185 185 170 Adc Adc C C C C ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. ESD 4000 400 V http://onsemi.com 2 NID5001N TYPICAL PERFORMANCE CURVES 28 VGS = 10 V to 4.2 V ID, DRAIN CURRENT (AMPS) 24 20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3.2 V 3.0 V 2.8 V 2.6 V 4V ID, DRAIN CURRENT (AMPS) 3.8 V 3.6 V TJ = 25C 3.4 V 28 24 20 TC = -55C 16 12 8 4 0 1 25C 100C 2 3 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 VDS 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 ID = 5 A TJ = 25C 0.035 Figure 2. Transfer Characteristics TJ = 25C 0.03 VGS = 5 V 0.15 0.1 0.025 VGS = 10 V 0.02 0.05 0 2 4 6 5 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 10 0.015 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 5 A VGS = 10 V 1.4 IDSS, LEAKAGE (A) 10000 100000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1.2 TJ = 150C 1000 TJ = 100C 1 0.8 0.6 -50 100 10 -25 0 25 50 75 100 15 20 25 30 35 40 45 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NID5001N TYPICAL PERFORMANCE CURVES 0.14 IS, SOURCE CURRENT (AMPS) 0.12 0.1 0.08 0.06 0.04 0.02 0 0.3 0.01 0.4 0.5 0.6 0.7 0.8 0.9 0.1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25C 100 I D , DRAIN CURRENT (AMPS) VGS = 5 V SINGLE PULSE TC = 25C Based upon a TJ = 100C, Steady State. 10 dc 1.0 10 ms 1 ms 100 ms 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1.0 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Diode Forward Voltage vs. Current Figure 8. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NID5001N PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NID5001N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NID5001N/D |
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